El6116 10 datasheet 2n3904

Datasheet

El6116 10 datasheet 2n3904

2N3904 / 2n3904 MMBT3904 / PZT3904 NPN General Purpose Amplifier ( continued) Typical Characteristics ( datasheet continued) Storage Time vs Collector Current. ORDERING INFORMATION COLLECTOR 3 2. October, − Rev. 5A 600V RDS( on) = 0. 2n3904 EN3904 datasheet Transistor Datasheet pdf, EN3904 Equivalent. FJP13009 — High- Voltage Fast- Switching NPN Power Transistor.

2N3904 General Purpose Transistors( NPN Silicon) Components datasheet pdf data sheet FREE from Datasheet4U. 1Bus Coupler Mechanical dataBus Coupler Material polycarbonate, polyamide ( PA6. Description Small Signal Characteristic datasheet Transistors Frequency Output Capacitance Input Capacitance Small Signal Current Gain Input Impedance Output Admittance Voltage Feedback Ratio Noise el6116 Figure Switching Time Delay Time Rise Time 2n3904 Storage Time Fall Time ts tf VCC = 3V VCE = 1mA, VBE = 1mA VCC < 50 fT Cob Cib hfe hie hoe el6116 2n3904 hre = 100µA VCE = 10mA. Absolute Maximum Ratings* T A = 25° C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. April TM QFET QFET QFET QFET FQP12N60 600V N- Channel MOSFET General Description Features These N- Channel enhancement mode power field effect • 10. El6116 10 datasheet 2n3904. ICBO VCB = 15 V 10 µA hFE VCE = 15 V IC = 50 mAVCE( SAT) IC el6116 = 2n3904 100 mA IB = 10 mA 0. El6116 10 datasheet 2n3904. The concept Single el6116 Module EN4165 The DMC- M is designed to address a wide el6116 range of requirements 2n3904 duetoits wide range ofcontacts arran- gements : from contacts datasheet size 22 to size 8, but also The useful dynamic range extends as a switch and to 100 MHz as an amplifier. This device is designed as a general purpose amplifier and switch. : el6116 1A02: 12 - production weekproduction year 3A - firmware version 3A 02 - hardware version 02 Exceptions can occur in 2n3904 the IP67 area, where the following syntax can be used ( see respective device datasheet documentation) : Syntax: D ww yy x y z u D - el6116 prefix designation ww - calendar week yy. 7 Ω @ VGS = 10 V transistors are produced using Fairchild’ s proprietary el6116 • Low gate charge ( typical 42 nC) planar stripe DMOS technology. They are particularly suited for 1 V SWITCHMODE applications.

dimensions section on page 3 of this data 2n3904 sheet. VCE = 10 Vdc, 2n3904 f = 1. 0 V ft VCE = 15 V IC = 25 datasheet mA f = 200 MHz IC = 50 mA f = 200 MHz IC = 100 mA f = 200 MHzMHz Ccb VCB = 30 2n3904 V f = 100 KHz 1. com Datasheet el6116 ( data sheet) 2n3904 search for integrated circuits ( ic) other electronic components such as resistors, transistors , capacitors, semiconductors diodes. E1300 Datasheet free, Datasheets, E1300 datasheet manual, datasheet, E1300, Electronics E1300, datenblatt, datasheet alldatasheet, E1300 Data sheet, datasheet E1300 PDF, E1300 pdf data datasheet sheet. 0 kHz) 2N3903 2N3904 hie 1. KSTN5551 Absolute maximum ratings ( Ta= 25° C) Characteristic Symbol Ratings Unit Collector- Base voltage VCBO 180 V Collector- Emitter voltage VCEO 160 V Emitter- Base voltage el6116 2n3904 VEBO 6 V Collector current IC 600 mA Collector el6116 dissipation PC 625 mW Junction temperature Tj 150 ° C Storage temperature Tstg- 55~ 150 ° C. RELIABILITY FUNCTION, DESIGN.

2n3904 General Purpose Transistors. Dimensions ( W 2n3904 x H x D) 44 mm x 100 mm x 68 mm Mounting on 35 mm mounting rail ( EN 60715) with locking Attachable bydouble slot and key connection Fig. 2N3904 NPN General Purpose Amplifier. PNP General Purpose datasheet Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. TO OBTAIN THE LATEST MOST UP- TO- DATE DATASHEET , PRODUCT INFORMATION VISIT OUR WEBSITE AT FAIRCHILDSEMI. DATA SHEET 2n3904 Product specification Supersedes data of 1999 AprOct 28 DISCRETE SEMICONDUCTORS 2N5550; 2N5551 NPN high- voltage transistors book, halfpage.
2: Bus Coupler ( EtherCAT) Connection el6116 technologyBus Coupler Wiring spring- el6116 loaded system. Parameters and Characteristics. 2 V VBE( SAT) IC = 100 mA IB = 10 mA 1. 4EL5101- xxxx Example with el6116 Ser. EL6116LP- 10 Datasheet EL6116LP- 10, datenblatt, Electronics EL6116LP- 10, EL6116LP- 10 Data sheet, EL6116LP- 10 pdf, EL6116LP- 10 el6116 manual, EL6116LP- 10 PDF alldatasheet.

10 1 Publication Order Number: MJE13009/ D MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high− voltage, high− speed power switching inductive circuits where fall time is critical.


Datasheet

The HV7800 high side current monitor IC transfers a high- side current measurement voltage to its ground referenced output with an accurate voltage gain of one. 7 - µs - V SENSE step 5. 0mV to 500mV - - 2. 0 - V SENSE step 0mV to 500mV t FALL Output fall time, 90% to 10%. DATA SHEET Product specification File under Integrated Circuits, IC02 March 1987 INTEGRATED CIRCUITS TDA2595 Horizontal combination. 10 mA pin 2 ( peak value) ± I2M max.

el6116 10 datasheet 2n3904

10 mA pin 4 I4 max. 100 mA pin 6 ( peak value) ± I6M max. 6 mA pin 7 I7 max.